- Engineering and Architecture
Exams
Colleges
Predictors
- Management and Business Administration
Colleges & Courses
Predictors
- Medicine and Allied Sciences
Colleges
Predictors
- Law
Colleges
Predictors & E-Books
- Animation and Design
Predictors & Articles
Colleges
- Media, Mass Communication and Journalism
Colleges
- Finance & Accounts
Resources
Top Courses & Careers
- Computer Application and IT
Colleges
- Pharmacy
Colleges
- Hospitality and Tourism
Colleges
Resources
Diploma Colleges
- Competition
Resources
Upcoming Events
- School
Exams
Top Schools
Products & Resources
- Study Abroad
Colleges
Top Countries
- Arts, Commerce & Sciences
Exams
Colleges
Upcoming Events
- Learn
Engineering Preparation
Medical Preparation
Law Preparation
- Online Courses and Certifications
Top Streams
Specializations
Resources
Get updates on Eligibility, Admission, Placements Fees Structure
Quick Facts
| Medium Of Instructions | Mode Of Learning | Mode Of Delivery |
|---|---|---|
| English | Self Study | Video and Text Based |
Courses and Certificate Fees
| Fees Informations | Certificate Availability | Certificate Providing Authority |
|---|---|---|
| INR 1000 | yes | IISc Bangalore |
The fees for the course Basics of Semiconductor Microwave Devices is -
| Head | Amount in INR |
| Exam fees | Rs. 1000 |
The Syllabus
- Introduction to the course: perspective & historical overview, Applications of various RF devices today
- Basics of heterojunctions and heterostructure physics, Basics of III-nitrides and polarization Schottky multipliers & varactors
- Transferred Electron Devices: Gunn Diode, Avalanche Transit Devices: IMPATT
- III-V MESFET: physics and transport, I-V, load line, transconductance, fabrication. Intro to JFOM
- III-V HEMT/MODFET – physics, modulation doping & the formation of 2DEG, breakdown, gain, traps, dispersion.
- p-HEMT, recess gate, field-plate, power cell, multi-finger devices, fabrication
- GaN HEMTs – benefits of WBG, various aspects of GaN RF HEMT such as substrate, processing, dispersion & virtual gate, leakage, stack design, compensation doping
- Basics of RF CMOS;LDMOS – device physics, transport, breakdown, On resistance, snapback
- LDMOS - layout & design, bond pad manifold, frequency aspects, the concept of RESURF
- Bipolar devices for RF: working of HBT, Early Effect, Kirk Effect, Gain, Common Emitter & Common Base mode, small-signal model
- Bipolar devices: base design, collector design, emitter ballast, SiGe bipolar, FET vs bipolar for RF, fabrication
- Microwave concepts for devices and packaging: S-parameters & 2-port analysis, concept of impedance, Intro to Smith chart, de-embedding parasitics, derivation of cut-off frequencies and MAG/MSG, Transmission lines & waveguides, concept of impedance matching, Basics of RF device packaging and thermal management
Instructors
Articles
Similar Courses
Indian Institute of Technology Madras via SwayamNPTEL
Indian Institute of Technology Roorkee via SwayamNPTEL
Indian Institute of Technology Madras via SwayamNPTEL
Indian Institute of Technology Delhi via SwayamNPTEL
More Courses by IISc Bangalore
Indian Institute of Science, Bangalore via TalentSprint
Indian Institute of Science, Bangalore via TalentSprint
Indian Institute of Science, Bangalore via Swayam
Indian Institute of Science, Bangalore via SwayamNPTEL
Indian Institute of Science, Bangalore via SwayamNPTEL
Indian Institute of Science, Bangalore via SwayamNPTEL
Indian Institute of Science, Bangalore via SwayamNPTEL
Indian Institute of Science, Bangalore via SwayamNPTEL
Indian Institute of Science, Bangalore via TalentSprint
Explore on Careers360
Knowledge Boosters
Student Community: Where Questions Find Answers